Parameters |
Mfr |
Vishay Siliconix |
Series |
EF |
Package |
Bulk |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
600 V |
Current - Continuous Drain (Id) @ 25°C |
19A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
182mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
96 nC @ 10 V |
Vgs (Max) |
±30V |
Input Capacitance (Ciss) (Max) @ Vds |
1423 pF @ 100 V |
FET Feature |
- |
Power Dissipation (Max) |
179W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
D²PAK (TO-263) |
Package / Case |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Base Product Number |
SIHB22 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
2266-SIHB22N60EF-GE3 |
Standard Package |
1,000 |
N-Channel 600 V 19A (Tc) 179W (Tc) Surface Mount D²PAK (TO-263)