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Vishay Siliconix SIHD6N62ET1-GE3

SIHD6N62ET1-GE3


  • Manufacturer: Walsin Technology Corporation
  • Chip 1 Group NO: SIHD6N62ET1-GE3
  • Price: $0.69
  • Datasheet: PDF
  • Description: SIHD6N62ET1-GE3(Kg)
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Details

Tags

Parameters
Mfr Vishay Siliconix
Series E
Package Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 620 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 578 pF @ 100 V
FET Feature -
Power Dissipation (Max) 78W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number SIHD6
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 2,000
N-Channel 620 V 6A (Tc) 78W (Tc) Surface Mount TO-252AA