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Vishay Siliconix SIHF22N60E-E3
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| Parameters | |
|---|---|
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 11A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1920 pF @ 100 V |
| FET Feature | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 Full Pack |
| Package / Case | TO-220-3 Full Pack |
| Base Product Number | SIHF22 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Other Names | SIHF22N60EE3 |
| Standard Package | 1,000 |
| Mfr | Vishay Siliconix |
| Series | - |
| Package | Tube |
| Product Status | Active |
N-Channel 600 V 21A (Tc) Through Hole TO-220 Full Pack
