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Vishay Siliconix SIHF22N60E-E3

SIHF22N60E-E3


  • Manufacturer: Walsin Technology Corporation
  • Chip 1 Group NO: SIHF22N60E-E3
  • Price: $1.87
  • Datasheet: PDF
  • Description: SIHF22N60E-E3(Kg)
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Details

Tags

Parameters
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 1920 pF @ 100 V
FET Feature -
Mounting Type Through Hole
Supplier Device Package TO-220 Full Pack
Package / Case TO-220-3 Full Pack
Base Product Number SIHF22
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names SIHF22N60EE3
Standard Package 1,000
Mfr Vishay Siliconix
Series -
Package Tube
Product Status Active
N-Channel 600 V 21A (Tc) Through Hole TO-220 Full Pack