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Vishay Siliconix SIHF35N60E-GE3

SIHF35N60E-GE3


  • Manufacturer: Walsin Technology Corporation
  • Chip 1 Group NO: SIHF35N60E-GE3
  • Price: $3.09
  • Datasheet: PDF
  • Description: SIHF35N60E-GE3(Kg)
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Details

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Parameters
Input Capacitance (Ciss) (Max) @ Vds 2760 pF @ 100 V
FET Feature -
Power Dissipation (Max) 39W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220 Full Pack
Package / Case TO-220-3 Full Pack
Base Product Number SIHF35
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1,000
Mfr Vishay Siliconix
Series E
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 94mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 132 nC @ 10 V
Vgs (Max) ±30V
N-Channel 600 V 32A (Tc) 39W (Tc) Through Hole TO-220 Full Pack