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Vishay Siliconix SIHF640S-GE3

SIHF640S-GE3


  • Manufacturer: Walsin Technology Corporation
  • Chip 1 Group NO: SIHF640S-GE3
  • Price: $2.08
  • Datasheet: PDF
  • Description: SIHF640S-GE3(Kg)
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Details

Tags

Parameters
Mfr Vishay Siliconix
Series -
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3.1W (Ta), 130W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number SIHF640
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1,000
N-Channel 200 V 18A (Tc) 3.1W (Ta), 130W (Tc) Surface Mount D²PAK (TO-263)