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Vishay Siliconix SIHP21N60EF-GE3

SIHP21N60EF-GE3


  • Manufacturer: Walsin Technology Corporation
  • Chip 1 Group NO: SIHP21N60EF-GE3
  • Price: $4.00
  • Datasheet: PDF
  • Description: SIHP21N60EF-GE3(Kg)
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Details

Tags

Parameters
Mfr Vishay Siliconix
Series -
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 176mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 84 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2030 pF @ 100 V
FET Feature -
Power Dissipation (Max) 227W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number SIHP21
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 2266-SIHP21N60EF-GE3
Standard Package 50
N-Channel 600 V 21A (Tc) 227W (Tc) Through Hole TO-220AB