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Vishay Siliconix SIHS36N50D-E3

SIHS36N50D-E3


  • Manufacturer: Walsin Technology Corporation
  • Chip 1 Group NO: SIHS36N50D-E3
  • Price:
  • Datasheet: PDF
  • Description: SIHS36N50D-E3(Kg)
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Details

Tags

Parameters
Mfr Vishay Siliconix
Series -
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 130mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 125 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3233 pF @ 100 V
FET Feature -
Power Dissipation (Max) 446W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package SUPER-247™ (TO-274AA)
Package / Case TO-274AA
Base Product Number SIHS36
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names SIHS36N50DE3
Standard Package 500
N-Channel 500 V 36A (Tc) 446W (Tc) Through Hole SUPER-247™ (TO-274AA)