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Vishay Siliconix SIHU4N80E-GE3

SIHU4N80E-GE3


  • Manufacturer: Walsin Technology Corporation
  • Chip 1 Group NO: SIHU4N80E-GE3
  • Price: $0.90
  • Datasheet: PDF
  • Description: SIHU4N80E-GE3(Kg)
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Details

Tags

Parameters
Mfr Vishay Siliconix
Series E
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.27Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 622 pF @ 100 V
FET Feature -
Power Dissipation (Max) 69W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package IPAK (TO-251)
Package / Case TO-251-3 Long Leads, IPak, TO-251AB
Base Product Number SIHU4
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 3,000
N-Channel 800 V 4.3A (Tc) 69W (Tc) Through Hole IPAK (TO-251)