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Vishay Siliconix SIHW47N65E-GE3

SIHW47N65E-GE3


  • Manufacturer: Walsin Technology Corporation
  • Chip 1 Group NO: SIHW47N65E-GE3
  • Price:
  • Datasheet: PDF
  • Description: SIHW47N65E-GE3(Kg)
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Details

Tags

Parameters
Mfr Vishay Siliconix
Series -
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 72mOhm @ 24A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 273 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5682 pF @ 100 V
FET Feature -
Power Dissipation (Max) 417W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AD
Package / Case TO-247-3
Base Product Number SIHW47
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 500
N-Channel 650 V 47A (Tc) 417W (Tc) Through Hole TO-247AD