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Vishay Siliconix SISA24DN-T1-GE3

SISA24DN-T1-GE3


  • Manufacturer: Walsin Technology Corporation
  • Chip 1 Group NO: SISA24DN-T1-GE3
  • Price: $0.96
  • Datasheet: PDF
  • Description: SISA24DN-T1-GE3(Kg)
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Details

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Parameters
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 4.5 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 2650 pF @ 10 V
FET Feature -
Power Dissipation (Max) 52W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
Base Product Number SISA24
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 3,000
N-Channel 25 V 60A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8