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Vishay Siliconix SIZ910DT-T1-GE3

SIZ910DT-T1-GE3


  • Manufacturer: Walsin Technology Corporation
  • Chip 1 Group NO: SIZ910DT-T1-GE3
  • Price:
  • Datasheet: PDF
  • Description: SIZ910DT-T1-GE3(Kg)
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Details

Tags

Parameters
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 3,000
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Half Bridge)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 40A
Rds On (Max) @ Id, Vgs 5.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 15V
Power - Max 48W, 100W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Supplier Device Package 8-PowerPair® (6x5)
Base Product Number SIZ910
RoHS Status ROHS3 Compliant
Mosfet Array 30V 40A 48W, 100W Surface Mount 8-PowerPair® (6x5)