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Vishay Siliconix SIZF906DT-T1-GE3

SIZF906DT-T1-GE3


  • Manufacturer: Walsin Technology Corporation
  • Chip 1 Group NO: SIZF906DT-T1-GE3
  • Price: $1.67
  • Datasheet: PDF
  • Description: SIZF906DT-T1-GE3(Kg)
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Details

Tags

Parameters
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel (TR)
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Half Bridge)
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Rds On (Max) @ Id, Vgs 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22nC @ 4.5V, 92nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 15V, 8200pF @ 15V
Power - Max 38W (Tc), 83W (Tc)
Operating Temperature -55°C ~ 150°C (TA)
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Supplier Device Package 8-PowerPair® (6x5)
Base Product Number SIZF906
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 3,000
Mosfet Array 30V 60A (Tc) 38W (Tc), 83W (Tc) Surface Mount 8-PowerPair® (6x5)