Parameters |
Mfr |
Vishay Siliconix |
Series |
TrenchFET® Gen IV |
Package |
Tape & Reel (TR) |
Product Status |
Active |
Technology |
MOSFET (Metal Oxide) |
Configuration |
2 N-Channel (Dual), Schottky |
FET Feature |
- |
Drain to Source Voltage (Vdss) |
30V |
Current - Continuous Drain (Id) @ 25°C |
23A (Ta), 40A (Tc), 35A (Ta), 60A (Tc) |
Rds On (Max) @ Id, Vgs |
4mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id |
2.4V @ 250µA, 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
22nC @ 10V, 56nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
1060pF @ 15V, 2650pF @ 15V |
Power - Max |
3.4W (Ta), 26.6W (Tc), 3.7W (Ta), 50W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
8-PowerWDFN |
Supplier Device Package |
8-PowerPair® (6x5) |
Base Product Number |
SIZF918 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
3,000 |
Mosfet Array 30V 23A (Ta), 40A (Tc), 35A (Ta), 60A (Tc) 3.4W (Ta), 26.6W (Tc), 3.7W (Ta), 50W (Tc) Surface Mount 8-PowerPair® (6x5)