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Vishay Siliconix SIZF920DT-T1-GE3

SIZF920DT-T1-GE3


  • Manufacturer: Walsin Technology Corporation
  • Chip 1 Group NO: SIZF920DT-T1-GE3
  • Price: $1.90
  • Datasheet: PDF
  • Description: SIZF920DT-T1-GE3(Kg)
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Details

Tags

Parameters
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel (TR)
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual), Schottky
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc)
Rds On (Max) @ Id, Vgs 3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA, 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V, 125nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 15V, 5230pF @ 15V
Power - Max 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Supplier Device Package 8-PowerPair® (6x5)
Base Product Number SIZF920
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 3,000
Mosfet Array 30V 28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc) 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc) Surface Mount 8-PowerPair® (6x5)