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Vishay Siliconix SQ2360EES-T1-GE3
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| Parameters | |
|---|---|
| Mfr | Vishay Siliconix |
| Series | - |
| Package | Cut Tape (CT) |
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 6A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 370 pF @ 25 V |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Base Product Number | SQ2360 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.21.0095 |
| Standard Package | 3,000 |
N-Channel 60 V 4.4A (Tc) Surface Mount SOT-23-3 (TO-236)
