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Vishay Siliconix SQJ411EP-T1_GE3

SQJ411EP-T1_GE3


  • Manufacturer: Walsin Technology Corporation
  • Chip 1 Group NO: SQJ411EP-T1_GE3
  • Price: $1.33
  • Datasheet: PDF
  • Description: SQJ411EP-T1_GE3(Kg)
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Details

Tags

Parameters
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Package Tape & Reel (TR)
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 5.8mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 9100 pF @ 6 V
FET Feature -
Power Dissipation (Max) 68W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SQJ411
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 3,000
P-Channel 12 V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8