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Vishay Siliconix SQJQ900E-T1_GE3

SQJQ900E-T1_GE3


  • Manufacturer: Walsin Technology Corporation
  • Chip 1 Group NO: SQJQ900E-T1_GE3
  • Price: $1.22
  • Datasheet: PDF
  • Description: SQJQ900E-T1_GE3(Kg)
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Details

Tags

Parameters
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Package Tape & Reel (TR)
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Rds On (Max) @ Id, Vgs 3.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 5900pF @ 20V
Power - Max 75W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® 8 x 8 Dual
Supplier Device Package PowerPAK® 8 x 8 Dual
Base Product Number SQJQ900
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 2,000
Mosfet Array 40V 100A (Tc) 75W Surface Mount PowerPAK® 8 x 8 Dual