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Vishay Siliconix SQS966ENW-T1_GE3
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| Parameters | |
|---|---|
| Mfr | Vishay Siliconix |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 1.25A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8.8nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 572pF @ 25V |
| Power - Max | 27.8W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount, Wettable Flank |
| Package / Case | PowerPAK® 1212-8W Dual |
| Supplier Device Package | PowerPAK® 1212-8W Dual |
| Base Product Number | SQS966 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 3,000 |
Mosfet Array 60V 6A (Tc) 27.8W (Tc) Surface Mount, Wettable Flank PowerPAK® 1212-8W Dual
