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Vishay Siliconix SQS966ENW-T1_GE3

SQS966ENW-T1_GE3


  • Manufacturer: Walsin Technology Corporation
  • Chip 1 Group NO: SQS966ENW-T1_GE3
  • Price: $0.98
  • Datasheet: PDF
  • Description: SQS966ENW-T1_GE3(Kg)
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Details

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Parameters
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Package Tape & Reel (TR)
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Rds On (Max) @ Id, Vgs 36mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 572pF @ 25V
Power - Max 27.8W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount, Wettable Flank
Package / Case PowerPAK® 1212-8W Dual
Supplier Device Package PowerPAK® 1212-8W Dual
Base Product Number SQS966
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 3,000
Mosfet Array 60V 6A (Tc) 27.8W (Tc) Surface Mount, Wettable Flank PowerPAK® 1212-8W Dual