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Vishay Siliconix SUP60N02-4M5P-E3

SUP60N02-4M5P-E3


  • Manufacturer: Walsin Technology Corporation
  • Chip 1 Group NO: SUP60N02-4M5P-E3
  • Price:
  • Datasheet: PDF
  • Description: SUP60N02-4M5P-E3(Kg)
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Details

Tags

Parameters
Mfr Vishay Siliconix
Series TrenchFET®
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5950 pF @ 10 V
FET Feature -
Power Dissipation (Max) 3.75W (Ta), 120W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number SUP60
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 500
N-Channel 20 V 60A (Tc) 3.75W (Ta), 120W (Tc) Through Hole TO-220AB