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Vishay Siliconix VQ1001P-2

VQ1001P-2


  • Manufacturer: Walsin Technology Corporation
  • Chip 1 Group NO: VQ1001P-2
  • Price:
  • Datasheet: PDF
  • Description: VQ1001P-2(Kg)
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Details

Tags

Parameters
Mfr Vishay Siliconix
Series -
Package Tube
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration 4 N-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 830mA
Rds On (Max) @ Id, Vgs 1.75Ohm @ 200mA, 5V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 110pF @ 15V
Power - Max 2W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case -
Supplier Device Package 14-DIP
Base Product Number VQ1001
RoHS Status RoHS non-compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 25
Mosfet Array 30V 830mA 2W Through Hole 14-DIP