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Winbond Electronics W66BM6NBUAGJ
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| Parameters | |
|---|---|
| Mfr | Winbond Electronics |
| Series | - |
| Package | Tray |
| Product Status | Not For New Designs |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR4X |
| Memory Size | 2Gbit |
| Memory Organization | 128M x 16 |
| Memory Interface | LVSTL_11 |
| Clock Frequency | 1.866 GHz |
| Write Cycle Time - Word, Page | 18ns |
| Access Time | 3.5 ns |
| Voltage - Supply | 1.06V ~ 1.17V, 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 105°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 200-WFBGA |
| Supplier Device Package | 200-WFBGA (10x14.5) |
| Base Product Number | W66BM6 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8542.32.0036 |
| Other Names | 256-W66BM6NBUAGJ |
| Standard Package | 144 |
SDRAM - Mobile LPDDR4X Memory IC 2Gbit LVSTL_11 1.866 GHz 3.5 ns 200-WFBGA (10x14.5)
